Method for forming an insulating film on a semiconductor substra

Details Method for forming an insulating film on a semiconductor substra Method for forming an insulating film on a semiconductor substra

1981-11-18

1984-03-06

Childs, Sadie L.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 96, 427255, 4272551, 4272554, B05D 512

Patent

active

044354479

ABSTRACT:
A method for forming an insulating film on the surface of a silicon semiconductor substrate of a semiconductor device. The semiconductor substrate is subjected to a direct thermal nitridation, in a gas atmosphere containing nitrogen or nitrogen atoms. The semiconductor substrate has an average concentration of oxygen of not more than 10.sup.18 /cm.sup.3. The silicon nitride film formed by the direct thermal nitridation is thin, even and amorphous. The structure of the interface between the silicon substrate and the silicon nitride film is highly dense.

REFERENCES:
patent: 3549411 (1970-12-01), Bean et al.
patent: 3649886 (1972-03-01), Kooi
patent: 3765935 (1973-10-01), Rand et al.
patent: 3874919 (1975-04-01), Lehman
patent: 4105805 (1978-08-01), Glendinning et al.
patent: 4181751 (1980-01-01), Hall et al.
Electric Phenomena, vol. 68, 1968, 99887h.
Frieser, "Direct Nitridation of Silicon Substrates", J. Electrochemical Society: Solid State Science, vol. 115, No. 10 p. 1092-1094, Oct. 1968.

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