Method for forming a protecting film on side walls of a semicond

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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204192P, 427 431, B05D 306, C23C 1700

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044354436

ABSTRACT:
A method for forming a protecting film on the side walls of a semiconductor device, e.g. a semiconductor laser, having an exposed PN junction at the side walls thereof is carried out by the following steps. The semiconductor device is placed on a substrate target made of a protecting film material. Energetic particles are impinged against the substrate target. Particles of the material are emitted from the substrate target and deposited on only the side walls to form the protecting film.

REFERENCES:
patent: 3519788 (1970-07-01), Hatzakis
patent: 3846294 (1974-11-01), Vossen
patent: 4172907 (1979-10-01), Mones et al.
Ladany et al., "App. Phys. Lett.," vol. 30, No. 2, pp. 87-88, 1977.
Shima et al., "App. Phys. Lett.," vol. 31, No. 9, pp. 625-627, 1977.
Barnes et al., "J. Appl. Phys.," vol. 49, No. 5, pp. 2981-2982.

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