High performance bipolar device and method for making same

Details High performance bipolar device and method for making same High performance bipolar device and method for making same

1977-10-25

1979-07-10

Wojciechowicz, Edward J.

357 50, 357 52, 357 59, 357 68, H01L 2712

Patent

active

041609913

ABSTRACT:
A method for manufacturing a high performance bipolar device and the resulting structure which has a very small emitter-base spacing is described. The small emitter-base spacing, reduces the base resistance compared to earlier device spacing and thereby improves the performance of the bipolar device. The method involves providing a silicon semiconductor body having regions of monocrystalline silicon isolated from one another by isolation regions and a buried subcollector therein. A base region is formed in the isolated monocrystalline silicon. A mask is formed on the surface of the silicon body covering those regions designated to be the emitter and collector reach-through regions. A doped polycrystalline silicon layer is then formed through the mask covering the base region and making ohmic contact thereto. An insulating layer is formed over the polysilicon layer. The mask is removed from those regions designated to be the emitter and collector reach-through regions. The emitter junction is then formed in the base region and the collector reach-through formed to contact the buried subcollector. Electrical contacts are made to the emitter and collector. The doped polycrystalline silicon layer is the electrical contact to the base regions.

REFERENCES:
IBM--Tech. Bull.--vol. 19, No. 12, May 1977, C. G. Jambotkar.

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