Bipolar transistors having fixed gain characteristics

Details Bipolar transistors having fixed gain characteristics Bipolar transistors having fixed gain characteristics

1976-08-02

1979-07-10

Wojciechowicz, Edward J.

357 34, 357 55, 357 86, H01L 2972

Patent

active

041609867

ABSTRACT:
Disclosed is a bipolar transistor comprising a semiconductor body having first and second opposed surfaces with opposing edge surfaces and emitter, base and collector regions in the body with an emitter-base junction between the emitter and base regions and a base-collector junction between the base and collector regions. The emitter-base junction extends across the semiconductor body and terminates at the edge surfaces such that injection across the emitter-base junction is substantially uniform across the semiconductor body. In one arrangement, two collector regions are provided, one of which is coupled to the base contact in order to control the gain of the transistor.

REFERENCES:
patent: 3823353 (1974-07-01), Berger
patent: 3896486 (1975-07-01), Wright
patent: 3979769 (1976-09-01), Houston et al.
patent: 4015282 (1977-03-01), Shaw
M. Polinsky, "Structure for Integrating Two Series...Diodes...," RCA TN No. 742, Jan. 1968.

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