Semiconductor device having trench isolation

Details Semiconductor device having trench isolation Semiconductor device having trench isolation

1991-09-05

1992-09-15

James, Andrew J.

357 2311, 357 49, 357 50, H01L 2968

Patent

active

051482479

ABSTRACT:
A semiconductor device having a trench isolation structure comprises a substrate, an active layer formed on the substrate, a trench which penetrates the active layer and reaches a portion of the substrate, and an insulator layer formed within the trench. The active layer has a region in which elements of the semiconductor device are formed, and the insulator layer has charges trapped in at least a predetermined portion thereof in a vicinity of the second region. This predetermined portion of the insulator layer has a depth which is greater than a depth of the region of the active layer.

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