Semiconductor device having a selectively doped heterostructure

Details Semiconductor device having a selectively doped heterostructure Semiconductor device having a selectively doped heterostructure

1991-09-10

1992-09-15

Jackson, Jr., Jerome

357 4, 357 16, H01L 29205, H01L 2980

Patent

active

051482452

ABSTRACT:
A semiconductor device having a selectively doped heterostructure comprises a substrate, a channel layer, a carrier supplying layer, and electrodes provided on the carrier supplying layer. The channel layer and the carrier supplying layer form a heterojunction interface at a boundary between the channel layer and the carrier supplying layer with a two-dimensional electron gas formed in the channel layer along the heterojunction interface. The carrier supplying layer and the channel layer have respective compositions determined such that the .GAMMA. valley of the conduction band of the carrier supplying layer has an energetical level higher than a corresponding energetical level of the .GAMMA. valley of the conduction band of the channel layer at the heterojunction interface, the L valley of the conduction band of the carrier supplying layer has an energetical level higher than a corresponding energetical level of the L valley of the conduction band of the channel layer at the heterojunction interface, the X valley of the conduction band of the carrier supplying layer has an energetical level higher than a corresponding energetical level of the X valley of the conduction band at the heterojunction interface, the energetical level of the .GAMMA. valley of the conduction band of the carrier supplying layer is equal to or higher than the energetical level of the L valley of the conduction band of the channel layer at the heterojunction interface, and the energetical level of the L valley of the conduction band of the carrier supplying layer is equal to or higher than the energetical level of the X valley of the conduction band of the channel layer at the heterojunction interface.

REFERENCES:
T. Ohori et al.; "Uniform and Abrupt InGaP/GaAs Selectively Doped Heterostructures Grown by MOVPE for HEMT ICs"; Nov. 1988; Journal of Crystal Growth, vol. 93, Nos. 1-4, pp. 905-910; Japan.

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