Quantum wire fabrication via photo induced evaporation enhanceme

Details Quantum wire fabrication via photo induced evaporation enhanceme Quantum wire fabrication via photo induced evaporation enhanceme

1994-07-22

1995-07-25

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 90, 437129, 437173, H01L 2120

Patent

active

054361915

ABSTRACT:
In situ removal of selected or patterned portions of quantum well layers is accomplished by photo induced evaporation enhancement to form quantum wire, patterned quantum wire and multiple quantum wires in a semiconductor structure.

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patent: 4962057 (1990-10-01), Epler et al.
patent: 5013684 (1991-05-01), Epler et al.
patent: 5114877 (1992-05-01), Paoli et al.
J. E. Eplaer et al., "In situ patterned desorption of GaAs quantum wells for monolithic multiple wavelength diode lasers," Appl. Phys. Lett. 54 (10), 6 Mar. 1989, pp. 881-883.

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