Method of fabricating a ROM device with a negative code implant

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 45, 437 52, H01L 21265

Patent

active

054361850

ABSTRACT:
A semiconductor ROM device on a semiconductor substrate includes an array of parallel bit lines oriented in a first direction. A blanket word line layer formed on the device is covered with a word line mask with word line patterns orthogonal to the bit lines used during etching of word line layer to form word lines. A blanket glass layer is formed over the device and then covered with a patterned negative negative code implant mask. A silicon dioxide layer is formed on the blanket glass layer around the patterned negative negative code implant mask. The negative negative code implant mask is removed leaving a ROM code opening through the silicon dioxide layer, whereby the silicon dioxide layer forms a ROM code implant mask. The ROM code opening is centered on a word line conductor, and a code ion implant of dopant is made through the ROM code opening forming a code implant doped region in the substrate below the word line. The silicon dioxide layer is formed by liquid phase deposition.

REFERENCES:
patent: 4356042 (1982-10-01), Gredaly et al.
patent: 4364167 (1982-12-01), Donley
patent: 5278078 (1994-01-01), Kanebako

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of fabricating a ROM device with a negative code implant does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a ROM device with a negative code implant , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a ROM device with a negative code implant will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-739346

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.