Thin film transistor and manufacturing method thereof

Details Thin film transistor and manufacturing method thereof Thin film transistor and manufacturing method thereof

1993-11-22

1995-07-25

Picardat, Kevin M.

Fishing, trapping, and vermin destroying

437 41, 437 44, 437 45, H01L 21265

Patent

active

054361842

ABSTRACT:
A thin film transistor (TFT) capable of reducing the leakage current on the occasion when the transistor is OFF and lowering the resistance of an interconnection layer connected to source/drain regions and a method of manufacturing the same are disclosed. In the thin film transistor, the length in the channel width direction of a polycrystalline silicon film 15 in junction parts 15c of a pair of source/drain regions 15b and a channel region 15a is smaller than the length in the channel width direction of polycrystalline silicon film 15 in source/drain regions 15b. Accordingly, the leakage current generated in junction parts 15c on the occasion when the TFT is OFF is reduced. In addition, it is unnecessary to reduce the length in the channel width direction of source/drain regions 15b, so that the resistance of an interconnection layer connected to source/drain regions 15b is lowered as compared to the conventional one.

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