Method of manufacturing thin film transistor panel

Details Method of manufacturing thin film transistor panel Method of manufacturing thin film transistor panel

1993-05-17

1995-07-25

Hearn, Brian E

Fishing, trapping, and vermin destroying

437246, 437 51, 148DIG105, H01L 2186

Patent

active

054361826

ABSTRACT:
A thin-film transistor panel is constituted by forming, on an insulating substrate, a plurality of thin-film transistors, a plurality of gate lines for each connecting gate electrodes of the thin-film transistors, and a plurality of pixel electrodes formed of a transparent conductive film connected to the thin-film transistors, then forming a low-resistance metal film of an Al or Al alloy for a data line and a surface metal film of Cr with a high density, forming a photoresist film of a predetermined pattern on the surface metal film, and etching the data line metal film and surface metal film. Then, the surface metal film remaining on the data line metal film is eliminated.

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Wolf, et al, "Silicon Processing for the VLSI ERA"; vol. 1, 1986 pp. 441-442.

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