Photodiode array device and method for producing same

Fishing – trapping – and vermin destroying

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437153, 437974, H01L 2122, H01L 21302

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054361710

ABSTRACT:
The improved photodiode array has a structure that has pn-junctions arranged in a row on a semiconductor substrate 1 having an oxide film 2. The photodiode array has such a surface pattern that n-type impurity diffused layers 3 and p-type impurity diffused layers 4 are arranged in a generally concentric manner or with layers of one diffusion type alternating with layers of the other diffusion type. The improved process of fabrication comprises joining the oxide film 2 on the semiconductor substrate 1 to an n-type semiconductor layer 3 and then diffusing a p-type impurity within the n-type semiconductor layer 3 to form pn-junctions, thereby yielding a photodiode array. Thereby, it is provided a photodiode array that has such a simple structure that not only is the yield of device fabrication improved but also the cost of the final product is reduced.

REFERENCES:
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patent: 3982315 (1976-09-01), Kubo
patent: 3994012 (1976-11-01), Warner, Jr.
patent: 4312114 (1982-01-01), Schoolar
patent: 4826777 (1989-05-01), Ondris
Haisma et al., "Silicon-on-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations", Jap. Jour. Appl. Phys., vol. 28, No. 8, pp. 1427-1428, 1989.

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