Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1992-05-29

1994-11-29

Fourson, George

Fishing, trapping, and vermin destroying

437228, 437924, H01L 2176

Patent

active

053690508

ABSTRACT:
A method of fabricating a semiconductor device includes the steps of forming a semiconductor layer having a convex device area and a convex alignment mark on an insulating layer. The insulating layer around the alignment mark is etched using the alignment mark as a mask to thereby form a groove around the alignment mark. A mask pattern is aligned with the device using the alignment mark surrounded by the groove as a reference point. Consequently the alignment mark can be detected using the step contour provided by the groove. This makes alignment using the so-called direct alignment technique possible, and alignment precision is improved.

REFERENCES:
patent: 3575740 (1971-04-01), Castrucci et al.
patent: 4309813 (1982-01-01), Hull
patent: 4981529 (1991-01-01), Tsujita
patent: 5252510 (1993-10-01), Lee et al.
IBM Tech. Disc. Bulletin vol. 32, No. 10B, Mar. 1990 Method of Simultaneously Defining Alignment Marks and Implantation Regions.

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-73836