Method for producing a passivation film of InP compound semicond

Details Method for producing a passivation film of InP compound semicond Method for producing a passivation film of InP compound semicond

1991-06-06

1992-09-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437245, 437234, 437230, 148DIG16, 205157, H01L 21208

Patent

active

051478277

ABSTRACT:
A device such as a phototransistor, a photodiode, a laser diode or the like including a compound semiconductor coated with a stable passivation film to reduce leakage current is disclosed. The passivation film includes oxygen, a metallic element and constituent elements of the device, and the concentration of the elements included in the passivation film changes gradually through the interface between the passivation film and the device. Such a passivation film is formed by the oxidation or anodic oxidation of a device soaked in an aqueous solution of hydrogen oxide containing metallic ions such as Fe.sup.2+, Fe.sup.3+, Cu.sup.+, Cu.sup.2+, Co.sup.2+ or Cr.sup.2+ under the control of the temperature of the solution.

REFERENCES:
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patent: 3844904 (1974-10-01), Yahalom
patent: 3859178 (1975-01-01), Logan et al.
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patent: 4026741 (1977-05-01), Chang et al.
Ermanis et al., "Anodic Oxidation of Gallium Phosphide in Aqueous Hydrogen Peroxide", J. Electrochem. Soc., Dec. 1974, vol. 121, No. 12, pp. 1665-1667.
Swartz, "Preliminary Results on the Oxidation of GaAs and GaP During Chemical Etching", J. Electrochem. Soc., Apr. 1971, vol. 118, No. 4, pp. 657-658.

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