Structure and process for fabricating conductive patterns having

Details Structure and process for fabricating conductive patterns having Structure and process for fabricating conductive patterns having

1990-08-09

1992-09-15

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, 430312, 430313, 430315, 430325, 430326, 430330, G03F 900

Patent

active

051477408

ABSTRACT:
A mask and lithographic process is disclosed for the formation of conductive patterns on substrates, particularly in connection with the formation of high electron mobility transistors (HEMT) and metal-semiconductor field effect transistors (MESFET). The technique allows the formation of sub-half micron conductive patterns on semiconductor substrates using optical lithography and a multilayer portable conformable mask. The method includes the application of optical contact lithography to a conventional photoresist followed by a deep UV flood exposure of an underlying multilayer PMGI portion. Metal is deposited on a semiconductor substrate through the mask formed by the photoresist and PMGI layers to produce sub-half micron conductive patterns.

REFERENCES:
patent: 4631249 (1986-12-01), Kalyanaraman
patent: 4814258 (1989-03-01), Tam
Pedrotti et al., "A Novel Optical Lithographic Process for Fabrication of Sub-Half-Micron Schottky Barrier Gate Structures", Journal of Vacuum Science Technology, vol. B7(4), pp. 675-679, (Jul./Aug. 1989).
Lin, "Portable Intimately Contacted Mask", IBM Technical Disclosure Bulletin, vol. 21, No. 5, Oct. 1978.
Lahiri et al., "Two Component Photoresist Process for Conductors", IBM Technical Disclosure Bulletin, vol. 26, No. 11, Apr. 1984.
Nolscher et al., Evaluation of Multilayer Resists for Submicron Technology, in Advances in Resist Technology and Processing V, SPIE vol. 920, pp. 437-445 (SPIE 1988).

Affiliated with

Also associated with

Rating

Structure and process for fabricating conductive patterns having does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure and process for fabricating conductive patterns having, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and process for fabricating conductive patterns having will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-735726