Coherent light generators – Particular active media – Semiconductor
Patent
1992-12-01
1994-01-25
Gonzalez, Frank
Coherent light generators
Particular active media
Semiconductor
H01S 319
Patent
active
052822192
ABSTRACT:
A semiconductor optical device includes a semiconductor laser having an effective refractive index n.sub.c, a first film having a refractive index n.sub.1 and a thickness d.sub.1, a second film having a refractive index n.sub.2 and a thickness d.sub.2, and a third film having a refractive index n.sub.3 and a thickness d.sub.3. The first to third films are successively disposed on a facet of the semiconductor laser. In this structure, the refractive indices and thicknesses of the first to third films are determined so that a characteristic matrix Xa of the three films is equal to a characteristic matrix Y of a single film whose refractive index n.sub.f is the square root of the effective refractive index n.sub.c of the semiconductor laser and whose thickness is obtained by dividing an oscillation wavelength .lambda. of the semiconductor laser by 4n.sub.f as represented by the following equation ##EQU1## where .phi.1=2.pi.n.sub.1 d.sub.1 /.lambda., .phi.2=2.pi.n.sub.2 d.sub.2 /.lambda., and .phi.3=2.pi.n.sub.3 d.sub.3 /.lambda.. Therefore, a non-reflection film having no reflectivity at the oscillation wavelength of the semiconductor laser is attained, and the production of the non-reflection film is simplified.
REFERENCES:
patent: 4147409 (1979-04-01), Apfel
patent: 4993036 (1991-02-01), Ikeda et al.
patent: 5020066 (1991-05-01), Iga et al.
patent: 5031186 (1991-07-01), Takigawa et al.
Cox et al., "Infrared Filters of Antireflected Si, Ge, InAs, and InSb", Journal of the Optical Society of America, vol. 51, No. 7, 1961, pp. 714-718.
Marclay et al., "Stepwise-graded-index Multilayer Broadband Low-reflectivity Coating for AlGaAs/GaAs Power Lasers", Applied Physics Letters, vol. 55, No. 10, 1989, pp. 942-944.
Aoyagi Toshitaka
Shigihara Kimio
Gonzalez Frank
Mitsubishi Denki & Kabushiki Kaisha
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