Semiconductor laser device

Coherent light generators – Particular active media – Semiconductor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

372 45, H01S 319

Patent

active

052822184

ABSTRACT:
A semiconductor laser device for radiating a laser beam from a double heterostructure section in which injected carriers having an energy source of the laser beam are confined consists of a compound semiconductor substrate with a prescribed lattice constant for loading the double heterostructure section, a lattice mismatched active layer with a first lattice constant which is 0.5% to 2.0% larger than the lattice constant of the substrate in the double heterostructure section for radiating the laser beam, a lattice mismatched cladding layer with a second lattice constant which is 0.2% to 2.0% smaller than the lattice constant of the substrate for confining the injected carriers in the active layer, and a cladding layer for confining the injected carriers in the active layer by co-operating with the lattice mismatched cladding layer.

REFERENCES:
patent: 4918496 (1990-04-01), Matsushima et al.
patent: 5016252 (1991-05-01), Hamada et al.
patent: 5036521 (1991-07-01), Hatakoshi et al.
J. Appl. Phys. vol. 54, pp. 2052-2056; H. Asai, et al.; Apr. 1983. "Energy Band-Gap Shift With Elastic Strain In Ga.sub.x In.sub.1-x P Epitaxial Layers On (001) GaAs Substrates".
J. Appl. Phys. vol. 68, pp. 3822-3825; N. K. Dutta, et al.: Oct. 15, 1990. "Performance Characteristics of In.sub.0.2 Ga.sub.0.8 As/GaAs Multiquantum-Well Lasers".
Electronic Letters, pp. 1278-1280; M. C. Tatham, et al.; Jul. 1991. vol. 27 No. 14: "Frequency Response and Differential Gain in Strained and Unstrained InGaAs/InGaAsP Quantum Well Lasers".
Japanese Journal of Applied Physics, Extended Abstracts 22th Conference of Solid State Devices and Materials 1990, pp. 565-568, K. Itaya, et al., "High-Temperature CW Operation of 630nm Band InGaAIP Visible Light Laser Diodes".
Applied Physics Letters, vol. 58, No. 9, Mar. 4, 1991, pp. 879-880, J. Hashimoto, et al., "Effects of Strained-Layer Structures on the Threshold Current Density of AIGaInP/GaInP Visible Layers".
Applied Physics Letters, vol. 59, No. 2, Jul. 8, 1991, pp. 149-151, K. Nitta et al., "High-Temperature Operation of High-Power InGaAIP Visible Light Laser Diodes with an In (0.5+.gamma.)Ga(0.5+.gamma.)P Active Layer".
Tech. Digest Cleo'91, pp. 94-95; C. J. Chang-Hasnain, et al.; May, 1991. "High Performance 634-nm InGaP/InGaAIP Strained Quantum-Well Lasers".
Tech. Digest Cleo'91, pp. 96-97; T. Katsuyama, et al.; May 1991. "Strain Effects on the Performance of AlGaInP/Ga In P Single Quantum Well Visible Laser Diodes".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-733583

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.