Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1992-06-09

1994-01-25

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

052822184

ABSTRACT:
A semiconductor laser device for radiating a laser beam from a double heterostructure section in which injected carriers having an energy source of the laser beam are confined consists of a compound semiconductor substrate with a prescribed lattice constant for loading the double heterostructure section, a lattice mismatched active layer with a first lattice constant which is 0.5% to 2.0% larger than the lattice constant of the substrate in the double heterostructure section for radiating the laser beam, a lattice mismatched cladding layer with a second lattice constant which is 0.2% to 2.0% smaller than the lattice constant of the substrate for confining the injected carriers in the active layer, and a cladding layer for confining the injected carriers in the active layer by co-operating with the lattice mismatched cladding layer.

REFERENCES:
patent: 4918496 (1990-04-01), Matsushima et al.
patent: 5016252 (1991-05-01), Hamada et al.
patent: 5036521 (1991-07-01), Hatakoshi et al.
J. Appl. Phys. vol. 54, pp. 2052-2056; H. Asai, et al.; Apr. 1983. "Energy Band-Gap Shift With Elastic Strain In Ga.sub.x In.sub.1-x P Epitaxial Layers On (001) GaAs Substrates".
J. Appl. Phys. vol. 68, pp. 3822-3825; N. K. Dutta, et al.: Oct. 15, 1990. "Performance Characteristics of In.sub.0.2 Ga.sub.0.8 As/GaAs Multiquantum-Well Lasers".
Electronic Letters, pp. 1278-1280; M. C. Tatham, et al.; Jul. 1991. vol. 27 No. 14: "Frequency Response and Differential Gain in Strained and Unstrained InGaAs/InGaAsP Quantum Well Lasers".
Japanese Journal of Applied Physics, Extended Abstracts 22th Conference of Solid State Devices and Materials 1990, pp. 565-568, K. Itaya, et al., "High-Temperature CW Operation of 630nm Band InGaAIP Visible Light Laser Diodes".
Applied Physics Letters, vol. 58, No. 9, Mar. 4, 1991, pp. 879-880, J. Hashimoto, et al., "Effects of Strained-Layer Structures on the Threshold Current Density of AIGaInP/GaInP Visible Layers".
Applied Physics Letters, vol. 59, No. 2, Jul. 8, 1991, pp. 149-151, K. Nitta et al., "High-Temperature Operation of High-Power InGaAIP Visible Light Laser Diodes with an In (0.5+.gamma.)Ga(0.5+.gamma.)P Active Layer".
Tech. Digest Cleo'91, pp. 94-95; C. J. Chang-Hasnain, et al.; May, 1991. "High Performance 634-nm InGaP/InGaAIP Strained Quantum-Well Lasers".
Tech. Digest Cleo'91, pp. 96-97; T. Katsuyama, et al.; May 1991. "Strain Effects on the Performance of AlGaInP/Ga In P Single Quantum Well Visible Laser Diodes".

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