Semiconductor integrated circuit having silicided elements of sh

Details Semiconductor integrated circuit having silicided elements of sh Semiconductor integrated circuit having silicided elements of sh

1997-06-04

2000-03-21

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257309, 257317, 257442, 438655, 438683, 438964, H01L 2348, H01L 2352, H01L 2940

Patent

active

060406291

ABSTRACT:
A surface of a conductive member such as a gate electrode provided with a silicon layer is roughened. The roughened silicon layer is silicified so that its width is substantially increased, whereby phase transition of the silicide layer is simplified. Thus, the resistance of the refined silicide layer is reduced due to the simplified phase transition.

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M. Sekine, et al., "Self-Aligned Tungsten Strapped Source/Drain and Gate Technology Realizing the Lowest Sheet Resistance for Sub-quarter Micron CMOS", 1994 IEEE, pp. 19.3.1-19.3.4.

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