Semiconductor device having larger contact hole area than an are

Details Semiconductor device having larger contact hole area than an are Semiconductor device having larger contact hole area than an are

1997-06-12

2000-03-21

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 72, 257288, 257382, 257383, 257384, 257385, 257386, 257343, 257347, 257350, 257377, 257576, 257584, H01L 21312, H01L 2904

Patent

active

060405899

ABSTRACT:
There is disclosed an active matrix liquid crystal display comprising pixels having an improved aperture ratio. A metallization layer makes contact with an active layer through openings. Inside the openings, the active layer is patterned into the same geometry as the metallization layer. That is, the active layer is patterned in a self-aligned manner according to the pattern of the metallization layer. This can enlarge the contact area. Also, the metallization layer does not required to be specially patterned for making contacts. A high aperture ratio can be obtained.

REFERENCES:
patent: 5015597 (1991-05-01), Vinouze et al.
patent: 5583369 (1996-12-01), Yamazaki et al.

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