Lithium niobate crystal wafer, process for the preparation of th

Details Lithium niobate crystal wafer, process for the preparation of th Lithium niobate crystal wafer, process for the preparation of th

1994-03-04

1995-08-01

Powell, William

Etching a substrate: processes

Nongaseous phase etching of substrate

With measuring, testing, or inspecting

385141, 216 85, 216101, B44C 122

Patent

active

054377617

ABSTRACT:
A lithium niobate crystal wafer wherein the deviations of the maximum and minimum absorption coefficients of the wafer at a wavelength of 2.87 .mu.m from the average absorption coefficient thereof at that wavelength fall within the range of .+-.0.1 cm.sup.-1 exclusive of both borders; a process for the preparation of the same; and a method for the evaluation thereof.

REFERENCES:
patent: 3860467 (1975-01-01), Lim
patent: 3954940 (1976-05-01), Rice et al.
patent: 4390392 (1983-06-01), Robinson et al.
patent: 4412886 (1983-11-01), Sakaguchi et al.
Journal of Applied Physics, vol. 68, No. 11, Dec. 1, 1990 New York pp. 5804-5809 Dhar et al "Optical Properties of . . . " p. 5404 US.
Patent Abstracts of Japan, vol. 15, No. 500 (C-895) Dec. 18, 1991 & JP-A-03 218 996 (Sumitomo Metal Mining Co., Ltd.) Sep. 26, 1991.

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