Gate controlled semiconductor device

Details Gate controlled semiconductor device Gate controlled semiconductor device

1981-11-09

1985-10-29

Edlow, Martin H.

357 49, 357 55, 357 234, 357 237, 357 238, H01L 2978, H01L 2974

Patent

active

045503320

ABSTRACT:
A gate-controlled semiconductor device comprises a semiconductor substrate disposed on a support element, where the semiconductor substrate has a recess protruding from the top surface into the semiconductor substrate for forming a gate electrode. An insulating layer covers the semiconductor and the recess and has at least two openings each having an electrode attached. In the semiconductor an npnp-transition is formed, which can be fired and interrupted by the gate electrode. The semiconductor device is useful in power control circuits, where it is important to control and switch large power signals with very small control signals.

REFERENCES:
patent: 3812405 (1974-05-01), Clark
patent: 3943555 (1976-05-01), Mueller et al.
patent: 4193836 (1980-03-01), Youmans et al.
patent: 4199774 (1980-04-01), Plummer
patent: 4224634 (1980-09-01), Suedberg
patent: 4253162 (1981-02-01), Hollingsworth
patent: 4329705 (1982-05-01), Baker
patent: 4364073 (1982-12-01), Becke et al.

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