Multilayer modulation doped heterostructure charge coupled devic

Details Multilayer modulation doped heterostructure charge coupled devic Multilayer modulation doped heterostructure charge coupled devic

1983-07-29

1985-10-29

Munson, Gene M.

357 15, 357 16, 357 22, H01L 2978, H01L 2956, H01L 29205, H01L 2980

Patent

active

045503311

ABSTRACT:
A charge couple device structure includes a thin layer of undoped Al.sub.x Ga.sub.1-x As as a spacer layer between an n.sup.+ doped Al.sub.x Ga.sub.1-x As layer and an undoped GaAs layer or substrate. This multilayer, selectively doped heterostructure supports a two-dimensional electron gas at the interface of the undoped spacer layer and the GaAs layer which permits both increased dynamic range and high speed charge transfer.

REFERENCES:
patent: 4285000 (1981-08-01), Deyhimy et al.
patent: 4424525 (1984-01-01), Mimura
Tsui et al., "Transport Properties of GaAs-AlGaAs Heterojunction Field-Effect Transistors", Appl. Phy. Lett., vol. 39 (Nov. 1, 1981), pp. 712-714.
Drummond et al., "Transport in Modulation-Doped Structures (AlGaAs/GaAs) . . . ", Appl. Phy. Lett., vol. 41 (Aug. 1, 1982), pp. 277-279.

Affiliated with

Also associated with

Rating

Multilayer modulation doped heterostructure charge coupled devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilayer modulation doped heterostructure charge coupled devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer modulation doped heterostructure charge coupled devic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-730645