Semiconductor interferometer

Details Semiconductor interferometer Semiconductor interferometer

1984-06-29

1985-10-29

Edlow, Martin H.

357 20, 357 15, 357 22, H01L 29161

Patent

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045503303

ABSTRACT:
An interferometer is constructed by providing a bifurcated branch conductive path coplanar with a heterojunction in a semiconductor with a band discontinuity that produces a potential well so that electron wave conduction at the heterojunction can be locally influence with an electric field applied to one branch of the bifurcated path.

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Physical Review Letters, vol. 52, No. 2, Jan. 9, 1984, "Quantum Oscillations and the Aharonov-Bohm Effect for Parallel Resistors" by Gefen et al., p. 129.
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IBM Journal of Research and Development, vol. 1, No. 3, Jul. 1957, p. 223, "Spatial Variation of Currents and Fields Due to Localized etc." by Landauer.
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