Method of making a shallow trench isolation with thin nitride as

Details Method of making a shallow trench isolation with thin nitride as Method of making a shallow trench isolation with thin nitride as

1999-05-11

2000-03-21

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438431, 257640, 257649, 257510, H01L 2951

Patent

active

060402334

ABSTRACT:
A semiconductor structure comprises a silicon substrate of a first conductivity type including wells of a second conductivity type disposed on a surface thereof and a dielectric layer including silicon nitride disposed on the surface. The dielectric layer includes openings at least partially disposed on the p-wells. The dielectric layer also includes a top latter comprising silicon dioxide having a thickness of less than ten angstroms. Trenches having a depth comparable to or greater than a depth of the wells extend into the substrate surface within the openings. A nonconductive material is disposed within the trenches and has an upper surface that is substantially coplanar with the dielectric layer. Portions of the dielectric layer are used as gate dielectrics for transistors.

REFERENCES:
patent: 5260229 (1993-11-01), Hodges et al.
patent: 5310692 (1994-05-01), Chan et al.
patent: 5543343 (1996-08-01), Bryant et al.
patent: 5786262 (1998-08-01), Jang et al.
patent: 5786263 (1998-08-01), Perera

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