Method of manufacturing shallow trench isolation

Details Method of manufacturing shallow trench isolation Method of manufacturing shallow trench isolation

1999-01-25

2000-03-21

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

221421, 221703, 221713, 221978, H01L 2176

Patent

active

060402326

ABSTRACT:
A method is described for manufacturing shallow trench isolation. The method comprises the steps of providing a substrate having a pad oxide layer, a mask layer, a trench penetrating through the mask layer and the pad oxide and into the substrate and a first liner oxide layer in the trench. A portion of the first liner oxide layer is stripped away to expose the bottom corner of the mask layer. A portion of the mask layer is stripped away to expose the top corner of the first oxide layer. The first liner oxide layer is removed to expose the surface of the trench. A second liner oxide layer is formed on the sidewall and the base surface of the trench and the trench is filled with an insulating material to form a shallow trench isolation.

REFERENCES:
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patent: 5578518 (1996-11-01), Koike et al.
patent: 5712185 (1998-01-01), Tsai
patent: 5719085 (1998-02-01), Moon et al.
patent: 5780346 (1998-07-01), Arghavani et al.
patent: 5837612 (1997-08-01), Ajuria et al.
patent: 5880004 (1997-06-01), Ho

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