Pair of bipolar transistors having base zones which are electric

Details Pair of bipolar transistors having base zones which are electric Pair of bipolar transistors having base zones which are electric

1975-11-21

1977-07-26

James, Andrew J.

357 35, 357 36, 357 15, 357 43, H01L 2972, H01L 2948, H01L 2956, H01L 2964

Patent

active

040386767

ABSTRACT:
A pair of bipolar transistors are formed in a semiconductor substrate with each transistor having at least one emitter, one base and at least one collector. At least the base is in the form of a doped zone in the substrate. The two base zones are electrically conductively connected to one another and the transistors are constructed or arranged in the substrate in such a manner that in each case free boundary faces of the two base zones lie opposite one another. The base connection is formed by an additionally doped zone in the interspace between the base zones, the doped zone having the same type of doping as the base zones.

REFERENCES:
patent: 3299281 (1967-01-01), Cluwen
patent: 3340601 (1967-09-01), Garibotti
patent: 3524113 (1970-08-01), Augusta et al.
patent: 3602981 (1971-09-01), Kooi
patent: 3898483 (1975-08-01), Sander et al.
patent: 3913123 (1975-10-01), Masaki et al.

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