Semiconductor device multilayer metal layer structure including

Details Semiconductor device multilayer metal layer structure including Semiconductor device multilayer metal layer structure including

1992-07-31

1994-01-25

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257767, 257915, H01L 2940

Patent

active

052818500

ABSTRACT:
A multilevel metallization structure for a semiconductor device having an antireflective film and a migration resistant film. The antireflective film is formed on a lower metallization and an dielectric inter-level film is formed on the antireflective film. The dielectric inter-level film has an opening hole for exposing the surface of the lower metallization. The migration resistant film is formed on the dielectric inter-level film and the surfaces of side walls of the opening hole. The upper metallization is formed on the migration resistant film and inside the opening hole so as to directly connect to the lower metallization.

REFERENCES:
patent: 4556897 (1985-12-01), Yorikane
patent: 4970574 (1990-11-01), Tsunenari
patent: 5081064 (1992-01-01), Inoue et al.
patent: 5151772 (1992-09-01), Takahashi et al.

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