Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1997-09-15
2000-03-21
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
430312, 430321, H01L 2100
Patent
active
060402016
ABSTRACT:
A method of manufacturing a thin film diode incorporated in a liquid crystal display, comprising a lower electrode connected with a signal electrode, an anodic oxidation film formed on the surface of the lower electrode, and an upper electrode formed so as to overlie the lower electrode via the anodic oxidation film and connected with a pixel electrode. The thin film diode is fabricated by forming a lower electrode material film made of a tantalum nitride film on a substrate, forming the lower electrode and the signal electrode by means of etching the lower electrode material film, forming the anodic oxidation film made of a tantalum oxide film on the surface of the lower electrode by means of the anodic oxidation treatment applied thereto, forming an upper electrode material film composed of a transparent and electrically conductive film on the entire surface of the substrate after an annealing applied in a vacuum, and forming the upper electrode and the pixel electrode by means of etching the upper electrode material film using a photoresist as an etching mask, after applying another annealing in a vacuum.
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Akiba Yuichi
Ide Masafumi
Chaudhari Chandra
Citizen Watch Co. Ltd.
Hawranek Scott J.
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