Measurement marks for e-beam projection mask and method of using

Details Measurement marks for e-beam projection mask and method of using Measurement marks for e-beam projection mask and method of using

1998-09-30

2000-03-21

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 22, 430 30, 430296, G03F 900

Patent

active

060400951

ABSTRACT:
Measurement marks are applied throughout the area of an e-beam projection mask on a grillage of struts extending between sub-field membrane mask areas concurrently with patterning the sub-field membrane mask areas. The thickness of the struts prevents printing of the measurement marks on the resist at the target plane even if inadvertently illuminated by the e-beam system. Measurement of the relative locations of the measurement marks after fabrication and incremental periods of use supports the development of compensation or correction in the electron-optical system for distortions of the mask which may be detected from the measurement marks by adjustment of operating parameters thereof.

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