SRAM cell fabrication with interlevel dielectric planarization

Details SRAM cell fabrication with interlevel dielectric planarization SRAM cell fabrication with interlevel dielectric planarization

1997-01-10

1998-01-20

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257760, 257640, 257904, 257752, 257903, 257350, 257380, 257381, 257385, 257758, H01L 2934, H01L 2348, H01L 23522, H01L 2954

Patent

active

057104611

ABSTRACT:
A 4-T SRAM cell in which two layers of permanent SOG (with an intermediate oxide layer) are used to provide planarization between the first and topmost poly layers.

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