Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-10-27
1998-01-20
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257229, 257249, 257445, 257455, 257456, H01L 3107, H01L 31108, H01L 27148
Patent
active
057104476
ABSTRACT:
Disclosed is a solid state image device which has a plurality of photosensitive units which are disposed in parallel with each other and each of which includes a row of a plurality of photosensitive devices each of which includes a first N(or P)-type impurity region which is selectively formed on the surface of a P(or N)-type semiconductor region at the surface of a semiconductor substrate, a CCD register for executing electronic scanning which is disposed in parallel to the row of photosensitive devices, and a read-out gate in which a signal charge is transferred from the photosensitive device to the CCD register, wherein a transparent Schottky electrode is formed on the first N(or P)-type impurity region except a portion adjacent to the read-out gate region, the Schottky electrode is electrically connected to a P.sup.+ (or N.sup.+)-type element separating region which surrounds the first N(or P)-type impurity region and has a Schottky barrier that is determined such that a diffusion potential between the Schottky electrode and the first N(or P)-type impurity region is lower than a diffusion potential between the first N(or P)-type impurity region and the P(or N)-type semiconductor region.
REFERENCES:
patent: 5565676 (1996-10-01), Tanabe
Y. Kitahama et al., "1/2 Inch 270,000 Elements CCD Image Devices with High Sensitivity", ITEJ Technical Report 13(11): 61-66 (1989).
Jackson Jerome
NEC Corporation
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