Soluble oxides for integrated circuit fabrication formed by the

Details Soluble oxides for integrated circuit fabrication formed by the Soluble oxides for integrated circuit fabrication formed by the

1993-04-22

1994-01-25

Thomas, Tom

Fishing, trapping, and vermin destroying

437238, 437240, 148DIG118, H01L 2100, H01L 2102

Patent

active

052815579

ABSTRACT:
In the manufacture of integrated circuits, a process for forming a dielectric layer such as silicon dioxide which has a high wet etch rate is disclosed. Illustratively, the process is performed with a precursor gas in a plasma reactor with a shower head and a susceptor which supports a wafer. The power density, pressure, susceptor-shower head spacing, and (optionally) temperature are respectively decreased, decreased, increased and decreased to reduce the effectiveness of dissociation of the precursor gas. The resulting film contains impurities which enhance its wet etch rate.

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