Fishing – trapping – and vermin destroying
Patent
1993-04-20
1994-01-25
Quach, T. N.
Fishing, trapping, and vermin destroying
437187, 437245, 20419217, 148DIG158, H01L 21283
Patent
active
052815544
ABSTRACT:
A method for producing a semiconductor device including forming an electrode or an electrode wiring by forming a tantalum thin film by sputtering is provided. In this method, a krypton gas in which nitrogen is mixed as a reactive gas is used as a sputtering gas, and a product of the pressure of the sputtering gas and a target-substrate distance is set in the range of 0.01 m.Pa to 0.08 m.Pa.
REFERENCES:
patent: 3558461 (1971-01-01), Parisi
patent: 3714013 (1973-01-01), Rairden
patent: 3763026 (1973-10-01), Cordes
patent: 3775278 (1973-11-01), Hensler et al.
patent: 3869367 (1975-03-01), Sato et al.
patent: 3878079 (1975-04-01), Schauer
patent: 4042479 (1977-08-01), Yamazaki et al.
patent: 4988422 (1991-01-01), Wirz
patent: 5068022 (1991-11-01), Carcia
Cuomo, J. J., et al., "Incorporation of rare gases . . . ", J. Vac. Sci. Technol., vol. 14, No. 1, Jan./Feb. 1977, pp. 152-157.
Gerstenberg, D., "Properties of Anodic Films . . . ", J. Electrochem. Soc., vol. 113, No. 6, Jun., 1966, pp. 542-547.
M. Nakamura et al., Japanese Journal of Applied Physics, vol. 9, No. 5, May 1970, pp. 557-571, "Phase Forming Processes in Tantalum Films Through Sputtering".
Morimoto Hiroshi
Shimada Yasunori
Quach T. N.
Sharp Kabushiki Kaisha
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