Method of manufacturing planar type polar transistors and combin

Details Method of manufacturing planar type polar transistors and combin Method of manufacturing planar type polar transistors and combin

1992-01-09

1994-01-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 32, 437162, H01L 21265, H01L 2970

Patent

active

052815447

ABSTRACT:
A sidewall construction is utilized in the method of manufacture of semiconductor devices comprising planar type bipolar transistors wherein the width of the sidewall construction can be accuracy controlled which, in turn, controls accuracy the channel length of the base of the planar type bipolar transistors. This technique provides ways of preventing short circuiting between the formed transistor collector and emitter regions of the planar type bipolar transistors. The sidewall construction can also be employed in fabrication combination planar type bipolar/MIS type transistors resulting in higher density of these structures over the prior art laterally positioned structures.

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