Continuous oxidation process for crystal pulling apparatus

Details Continuous oxidation process for crystal pulling apparatus Continuous oxidation process for crystal pulling apparatus

1998-10-07

2000-03-21

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 20, 117208, 117932, C30B 1500

Patent

active

060398019

ABSTRACT:
A continuous oxidation process and apparatus for using the same are disclosed. During growth of a semiconductor crystal an oxygen-containing gas is continuously injected into the crystal pulling apparatus in an exhaust tunnel downstream from the hot zone to continuously oxidize hypostoichiometric silicon dioxide, silicon vapor, and silicon monoxide produced in the hot zone during the crystal growth so as to minimize or eliminate the possibility of rapid over-pressurization of the apparatus upon exposure to the atmosphere.

REFERENCES:
patent: 5037503 (1991-08-01), Kajimoto et al.
patent: 5131974 (1992-07-01), Oda et al.
patent: 5270020 (1993-12-01), Suzuki et al.
patent: 5373804 (1994-12-01), Tachimori et al.
patent: 5904768 (1999-05-01), Holder

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