Wave transmission lines and networks – Attenuators
Patent
1996-04-12
1997-09-09
Gensler, Paul
Wave transmission lines and networks
Attenuators
327308, H03H 724
Patent
active
056660898
ABSTRACT:
In the present invention a monolithic step attenuator has internal frequency compensation provided by a field effect transistor, or FET, fabricated to have a well defined drain-to-source capacitance. The drain-to-source capacitance of the FET cancels the effect of parasitic impedances, providing a constant frequency response for the monolithic step attenuator within a defined frequency range. In a first embodiment of the present invention, internal frequency compensation is provided by a FET connected in a shunt arm of a Tee resistor network forming the monolithic step attenuator. In a second embodiment of the present invention, internal frequency compensation is provided by a pair of FETs, each FET connected in one of two shunt arms of a Pi resistor network forming the monolithic step attenuator. In a third embodiment of the present invention, a multicell step attenuator is formed by connecting multiple monolithic step attenuators having internal frequency compensation in series.
REFERENCES:
patent: 5563557 (1996-10-01), Sasaki
Gensler Paul
Hewlett--Packard Company
Imperato John L.
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