Insulator coating for improved step coverage in VLSI devices

Details Insulator coating for improved step coverage in VLSI devices Insulator coating for improved step coverage in VLSI devices

1985-06-04

1987-06-23

James, Andrew J.

357 54, 357 68, H01L 2348

Patent

active

046757163

ABSTRACT:
In manufacture of VLSI semiconductor devices, the insulator surface upon which a metallization pattern is deposited is made more smooth by the deposition of a thin insulator in liquid form. This insulator may be silicon oxide deposited from a solution, or otherwise from a liquid carrier, spun on to create thick portions in corners and steep edges, thus promoting improved step coverage. The insulator may be phosphorous-doped so the subsequently-applied thick oxide may be undoped, permitting a two-step wet/dry etch for contact holes, producing sloping sides to reduce metal thinning.

REFERENCES:
patent: 4185294 (1980-01-01), Sumitomo
RCA Technical Notes, TN#1234, 11/27/79, "Silicon Nitride Isolation of Phosphosilicate Glass Layer".

Affiliated with

Also associated with

Rating

Insulator coating for improved step coverage in VLSI devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulator coating for improved step coverage in VLSI devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulator coating for improved step coverage in VLSI devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-725043