MOS transistor

Details MOS transistor MOS transistor

1985-08-12

1987-06-23

James, Andrew J.

357 238, 357 15, 357 67, 357 71, H01L 2978, H01L 2956

Patent

active

046757139

ABSTRACT:
An improved MOS transistor and method for making that transistor are provided. The improved transistor is characterized by decreased size, improved switching speed, and improved reliability in inductive load use. The improved structure is achieved through the use of a low minority carrier injecting source region formed, for example, by providing a low barrier height metal silicide. The metal silicide source provides a source of majority carriers but little minority carrier injection and hence little parasitic bipolar transistor action.

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Murarka, J. Vac. Sci. Tech., 17(4), Jul./Aug. 1980, pp. 776-792, "Refractory Silicides for Integrated Circuits".

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