Method for producing a semiconductor device having a semiconduct

Details Method for producing a semiconductor device having a semiconduct Method for producing a semiconductor device having a semiconduct

1996-04-24

1998-01-20

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437100, 437933, H01L 2122

Patent

active

057100594

ABSTRACT:
A method for producing a semiconductor device comprises a step of implanting first conductivity type impurity dopants of at least two different elements in a semiconductor layer being doped according to a second opposite conductivity type, and after that anneal the semiconductor layer at such a high temperature that one of said elements is diffusing slowly into the semiconductor layer and the other is diffusing rapidly thereinto.

REFERENCES:
patent: 5030580 (1991-07-01), Furukawa et al.
patent: 5170231 (1992-12-01), Fujii et al.
patent: 5318915 (1994-06-01), Baliga et al.
"High Transconductance .beta.-SiC Buried-Gate JFET's", HFPC May 1989 Proceedings, pp. 95-102.
"High-Transconductance .beta.-SiC Buried-Gate JFET's", IEEE Transactions on Electron Devices, vol. 36, No. 6, Jun. 1989, pp. 1045-1049.
"Characteristics of Inversion-Channel and Buried-Channel MOS Devices in 6H-SiC", IEEE Transactions on Electron Devices, vol. 41, No. 7, Jul. 1994, pp. 1257-1264.

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