Fishing – trapping – and vermin destroying
Patent
1996-07-12
1998-01-20
Fourson, George R.
Fishing, trapping, and vermin destroying
437 86, 437974, 148DIG12, 117915, H01L 2176
Patent
active
057100578
ABSTRACT:
A first region of a seed substrate is separated from a bonded handle substrate by etching and/or fracturing a second region of the seed substrate. A third region of the seed substrate remains bonded to the handle wafer. Etching and etch ant distribution are facilitated by capillary action in trenches formed in the seed substrate prior to bonding of the handle substrate. A portion of the second region may be removed by undercut etching prior to handle bonding. Elevated pressure and etchant composition are used to suppress bubble formation during etching. Alternatively, pressure from bubble formation is used to fracture a portion of the second region. First, second, and third regions are defined by a variety of methods.
REFERENCES:
patent: 3332137 (1967-07-01), Kenney
patent: 4445965 (1984-05-01), Milnes
patent: 4475980 (1984-10-01), Rhemer et al.
patent: 4883561 (1989-11-01), Gmitter
patent: 5362682 (1994-11-01), Bozler et al.
patent: 5641381 (1997-06-01), Bailey et al.
Yablonovitch et al., "Extreme Selectivity in the Lift-off of Epitaxial GaAs Films," Appl. Phys. Lett., 51 (26), Dec. 28, 1987, pp. 2222-2224.
Fan, "Thin Films of III-V Compounds and Their Applications," Journal de Physique, 43, Oct., 1982, pp. C1-327 to C1-339.
Bruel et al., ".RTM. Smart Cut: A Promising New SOI Material Technology," IEEE International SOI Conference, Oct., 1995, pp. 178-179.
Sato et al., "High-Quality Epitaxial Layer Transfer (ELTRAN) by Bond and Etch-Back of Porous Si," IEEE International SOI Conference, Oct., 1995, pp. 176-177.
Alles et al., "Advanced Manufacturing of SIMOX for Low Power Electronics," Solid State Electronics, vol. 39, No. 4, 1996, pp. 499-504.
Yonehara et al., "Epitaxial Layer Transfer by Bond and Etch Back of Porous Si," Appl. Phys. Lett., 64 (16), 18 Apr., 1994, pp. 2108-2110.
Sato et al., "Epitaxial Growth on Porous Si for a New Bond and Etchback Silicon-on-Insulator," J. Electrochem. Soc., vol. 142, No. 9, Sep., 1995, pp. 3116-3122.
Kolthoff et al., "Treatise on Analytical Chemistry," Part II, vol. I,1961, pp. 49 and 53.
Dumke et al., "GaAs-GaAIAs Heterojunction Transistor for High Frequency Operation," Solid State Electronics, vol. 15, 1972, pp. 1339-1343.
Tsao et al., "Selective Porous Silicon Formation in Buried P+ Layers," J. Appl. Phys., 62 (10), Nov. 15, 1987, pp. 4182-4186.
Kemlage et al., "Total Dielectric Isolation," IBM Technical Disclosure Bulletin, vol. 24, No. 11B, Apr. 1982, pp. 6008-6009.
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