High-speed measurement of I.sub.CEO in transistors and opto-isol

Details High-speed measurement of I.sub.CEO in transistors and opto-isol High-speed measurement of I.sub.CEO in transistors and opto-isol

1977-06-27

1979-02-27

Rolinec, Rudolph V.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

G01R 3122

Patent

active

041421507

ABSTRACT:
In testing transistor devices, measurements of the collector-emitter leakage current of the devices with the base open (i.e., I.sub.CEO) generally require long measuring intervals. This is due to the necessity of charging the Miller Capacitance of the device under test prior to taking the measurement. While the Miller Capacitance is charging, a small base current flows which makes an accurate reading of the I.sub.CEO very difficult. To shorten these measurement times, a voltage is applied to the base of the device to increase the charging rate of the Miller Capacitance. After a predetermined time, the voltage is disconnected thereby opening the base of the transistor device. The I.sub.CEO reading is then taken at the emitter of the device after it has stabilized to an approximate level of I.sub.CEO. As an alternative to the application of a voltage to the base, a feedback circuit is connected between the emitter and the base of the test device to provide an automatically adjusted driving current to the base. This sets the emitter current at a desired level and rapidly charges the Miller Capacitance. If the desired emitter current is set at the level of maximum allowable I.sub.CEO, a go-no go reading of the device can be very rapidly made after the base is open by determining whether the I.sub.CEO is increasing or decreasing from the present level.

REFERENCES:
todd, C. D.; "Simple Tests for Semiconductors"; Electronics World, Dec. 1963, pp. 36-38.

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