Method for determining conduction-band edge and electron affinit

Details Method for determining conduction-band edge and electron affinit Method for determining conduction-band edge and electron affinit

1977-12-22

1979-02-27

Krawczewicz, Stanley T.

Electricity: measuring and testing

Conductor identification or location

Inaccessible

250307, 324158R, G01R 2702

Patent

active

041421450

ABSTRACT:
A method which utilizes low-energy electron reflections to determine the ctron affinity and to simultaneously locate the position of the conduction-band edge with respect to the Fermi level at the surface of a single-crystal semiconductor. A beam of very-low-energy electrons (<10eV) is directed onto the surface of the semiconductor and the reflection pattern (beam energy v. current collected by the semiconductor) is analyzed using a kinematical approximation for the interference phenomena.

REFERENCES:
patent: 3146347 (1964-08-01), Ziegler
patent: 3337729 (1967-08-01), Thomas et al.
patent: 3341704 (1967-09-01), Thomas et al.
patent: 3745454 (1973-07-01), Nikirk et al.
patent: 3876879 (1975-04-01), McAdans et al.
patent: 3935458 (1976-01-01), Peters
patent: 4000458 (1976-12-01), Miller et al.

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