Process for the manufacture of silicon of large surface area bon

Details Process for the manufacture of silicon of large surface area bon Process for the manufacture of silicon of large surface area bon

1977-10-11

1979-02-27

Esposito, Michael F.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, 427 51, 427 74, 427 85, 427 86, H01L 21223, H01L 21383

Patent

active

041417640

ABSTRACT:
Process for the manufacture of silicon of large surface area bonded to a substrate, which comprises depositing silicon to a thickness of from 30 to 500 .mu.m onto panel-shaped substrates of glassy carbon (a glass-like carbon obtained by carbonizing a spatially cross-linked synthetic resin) that are heated by direct passage of an electric current to temperatures above the melting point of silicon, and thereafter cooling the silicon to a temperature below its melting point in the direction from its free surface toward the substrate. The invention also comprises the silicon panels so made which are especially useful in the manufacture of solar cells.

REFERENCES:
patent: 3141849 (1964-07-01), Enk
patent: 3335038 (1967-08-01), Doo
patent: 3808033 (1974-04-01), Mayhew
patent: 3900943 (1975-08-01), Sirtl
patent: 4059461 (1977-11-01), Fan
Chu et al., IEEE Photospecialist Conf. (May 6, 1975), pp. 303-305.
Chu et al., IEEE Trans. on Electron Devices, vol. ED-24, No. 4, 4-1977, pp. 42-446.
Chu et al., J. Electrochem. Soc., vol. 122 (No. 12), pp. 1681-1685, 12-1975.
Chu et al., J. Electrochem. Soc., vol. 123, No. 1, pp. 106-110, (1-1976).

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