Low temperature deposition method for high quality aluminum oxid

Details Low temperature deposition method for high quality aluminum oxid Low temperature deposition method for high quality aluminum oxid

1985-11-25

1987-06-23

Niebling, John F.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

427 39, B05D 306

Patent

active

046750894

ABSTRACT:
A high quality Al.sub.2 O.sub.3 film is deposited by means of plasma enhanced chemical vapor deposition by passing a trialkylaluminum vapor over the surface of a substrate and CO.sub.2 gas as the oxidant in a plasma above the substrate surface. The CO.sub.2 is controlled to prevent particle formation due to gas phase reaction in the plasma as opposed to directly on the substrate surface.

REFERENCES:
Preparation and Properties of Aluminum Oxide Films Obtained by Glow Discharge Technique, H. Katto et al., J. Electrochem. Soc., 118, (10), 1619-1623 (1971).
Electrical Properties of Al.sub.2 O.sub.3 and AlP.sub.x O.sub.y Dielectric Layers on InP, L. G. Meiners, Thin Solid Films, 113, 85-92 (1984).
Plasma Enhanced Metal-Organic Chemical Vapor Deposition of Aluminum Oxide Dielectric Film for Device Applications, K. P. Pande et al., J. Appl. Phys., 54, (9), 5436-5440, (1983).

Affiliated with

Also associated with

Rating

Low temperature deposition method for high quality aluminum oxid does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low temperature deposition method for high quality aluminum oxid, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low temperature deposition method for high quality aluminum oxid will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-719541