Thin film structures and method for fabricating same

Details Thin film structures and method for fabricating same Thin film structures and method for fabricating same

1977-12-27

1980-06-03

Wojciechowicz, Edward J.

357 71, H01L 2348

Patent

active

042064724

ABSTRACT:
Thin film structures comprising a layer of aluminum and a material having a tendency to interact with aluminum are separated by an intermediate layer of aluminum having a high aluminum oxide content. The intermediate layer prevents said interaction by acting as a diffusion barrier.
Preferred embodiments are directed to silicon semiconductor metallization structures, including Schottky barrier contacts, which comprise a bottom layer of tantalum, or other transition metal, or a metal silicide in contact with a silicon substrate, an intermediate layer of aluminum having a high aluminum oxide content and a top layer of aluminum. The intermediate layer functions as a diffusion barrier between aluminum and the metal, metal silicide or silicon. The preferred embodiments of the invention also includes the process for forming such structures preferably comprising: depositing pure tantalum under high vacuum in evaporation apparatus, substituting aluminum for tantalum in the evaporation apparatus and bleeding-in water, air or oxygen to form the aluminum oxide-rich intermediate aluminum layer and then returning to the high vacuum to deposit pure aluminum. The invention is also applicable to FET or CCD structures where a diffusion barrier for aluminum is required.

REFERENCES:
patent: 3878442 (1975-04-01), Bhatt
patent: 3906540 (1975-09-01), Hollins
patent: 3939047 (1976-02-01), Tsunemitsu et al.

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