Reduction of sparkle noise in CCD imagers

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307311, 357 24, 357 30, G11C 1928, H03K 342, H01L 2978, H01L 2714

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active

042063728

ABSTRACT:
The present invention is applicable to a CCD imager of the field transfer type employing a single layer electrode structure comprising gate electrodes formed of semiconductor material of one conductivity type separated from one another by semiconductor material of opposite conductivity type. Sparkle is reduced by DC biasing the electrodes in the B register driven by at least one of the multiple phase voltages.

REFERENCES:
patent: 3943545 (1976-03-01), Kim
Rodgers "A 512X320 Element Silicon Imaging Device" IEEE Int. Solid-State Circuits Conf. (2/75), Dig. Tech. Papers, pp. 188-189.

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