Semiconductor memory device having trench in which word line is

Details Semiconductor memory device having trench in which word line is Semiconductor memory device having trench in which word line is

1994-05-09

1995-03-14

LaRoche, Eugene R.

Static information storage and retrieval

Floating gate

Particular biasing

365149, 257301, 257306, 257309, G11C 1134, H01L 2968

Patent

active

053982053

ABSTRACT:
A semiconductor memory device including a plurality of memory cells of one-transistor and one-capacitor type is disclosed. Each of the memory cells includes a cell active region surrounded by a trench isolation region, a trench formed to cross the cell active region to thereby divide a surface portion of the cell active region into first and second parts, a word line formed in the trench in isolation form the cell active region by a gate insulating film, source and drain regions respectively formed in the first and second parts in contact with the trench, a first insulating film formed to cover the cell active region and the word line, a bit line formed in contact with a part of the drain region through a first contact hole provided in the first insulating film, a second insulating film formed to cover the bit line and the first insulating film, a storage electrode formed in contact with a part of the source region through a second contact hole provided in the first and second insulating films, a dielectric film formed on the storage electrode, and a cell plate electrode formed on the dielectric film.

REFERENCES:
patent: 4796228 (1989-01-01), Baglee
patent: 4979004 (1990-12-01), Esquivel et al.
patent: 5042008 (1991-08-01), Iwasa et al.
patent: 5146426 (1992-09-01), Mouwerjee et al.
patent: 5250458 (1993-10-01), Tsukamoto et al.
patent: 5309008 (1994-05-01), Watanabe
S. Kimura et al., "A New Stacked Capacitor DRAM Cell Characterized by a Storage Capacitor on a Bit-line Structure", IEDM, 1988, pp. 596-599.

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