Method of making a substrate contact for an integrated circuit

Details Method of making a substrate contact for an integrated circuit Method of making a substrate contact for an integrated circuit

1977-04-11

1978-04-04

Tupman, W.

Metal working

Method of mechanical manufacture

Electrical device making

29571, 29589, B01J 1700

Patent

active

040818969

ABSTRACT:
Electrical contact to the substrate of a COS/MOS integrated circuit made with a four photomask process and having a well region of conductivity type opposite to that of the substrate is made by ion implanting through the bond pad openings to reconvert portions of the well to the opposite conductivity type thereby allowing contact to be made to the underlying substrate from the top surface.

REFERENCES:
patent: 3440500 (1969-04-01), Coppen
patent: 3679492 (1972-07-01), Fang
patent: 3865651 (1975-02-01), Arita
patent: 3931634 (1976-01-01), Knight

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