Method of fabricating semiconductor devices with a low thermal r

Details Method of fabricating semiconductor devices with a low thermal r Method of fabricating semiconductor devices with a low thermal r

1977-02-08

1979-02-27

Tupman, W.

Metal working

Method of mechanical manufacture

Electrical device making

29589, 357 58, B01J 1700

Patent

active

041411366

ABSTRACT:
A method of fabricating highly miniaturized semiconductor devices which must be electrically but not thermally insulated from ground, by replacing the conventional disk of beryllium oxide with a portion of the substrate itself so as to decrease the thermal resistance. To this end one starts with a disk of "PIN"-structure silicon. On one of its faces (P or N as the case may be) one deposits by epitaxy, or forms by successive diffusions, the active layers of the device and the surdoped zones. The "PIN" diode may be reverse biased if it is desired to create a capacity between active layers and metallic support serving as heat sink. Diodes and transistors in high-frequency microelectronics obtained by the method are also described.

REFERENCES:
patent: 2790940 (1957-04-01), Prince
patent: 3607468 (1971-09-01), Chang
patent: 3875657 (1975-04-01), Clarke

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