Method of fabricating semiconductor device having trench isolati

Details Method of fabricating semiconductor device having trench isolati Method of fabricating semiconductor device having trench isolati

1997-07-11

1999-09-28

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438430, 438431, 438298, 148DIG50, H01L 2176

Patent

active

059602988

ABSTRACT:
A method of fabricating a semiconductor device having a trench isolation structure includes forming an isolation region including a trench and a trench plug for filling the trench so as to define active regions on a substrate, a part of the trench plug projecting upward from the surface of the substrate, forming sidewall spacers from an oxidative material on the sidewalls of the projecting portion of the trench plug, and oxidating the surface of the active region of the substrate and the sidewall spacers so as to form a gate insulating layer extending to the upper part of the active region of the substrate and the side surfaces of the trench plug.

REFERENCES:
patent: 4389294 (1983-06-01), Anantha et al.
patent: 5387540 (1995-02-01), Poon et al.
patent: 5406111 (1995-04-01), Sun
patent: 5506168 (1996-04-01), Morita et al.
patent: 5604159 (1997-02-01), Cooper et al.
patent: 5677233 (1997-10-01), Abiko

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