Patent
1980-04-07
1983-10-25
Larkins, William D.
357 12, 357 58, 357 59, 357 67, 357 71, 357 92, H01L 2710, H01L 2352, H01L 2904
Patent
active
044122390
ABSTRACT:
A semiconductor device comprising a semiconductor substrate, a plurality of IIL gates formed in the substrate, each consisting of an inverter transistor and an injector transistor, and polysilicon films of P and N conductivity types connected to each other and formed as electrode layers connected with diffusion layers of P and N conductivity types which are formed on the substrate, respectively.
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Iwasaki Hiroshi
Ozawa Osamu
Larkins William D.
Tokyo Shibaura Denki Kabushiki Kaisha
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